High saturation magnetization, perpendicular magnetic anisotropy, and high Curie temperature are required for ferromagnetic/ferroelectric thin films to apply the Race-Track memory, which are next-generation magnetic recording devices. Therefore, in the BiFeO3-based ferromagnetic/ferroelectric thin fi lms, the amount of substituted La for Bi in the A-site was fi xed at about 50 at%, and the amount of substituted Ni or Co for Fe in the B-site was varied from 0 to 35 at%, respectively. The magnetic properties of(Bi,La)(Fe,Ni)O3 and(Bi,La)(Fe,Co)O3 films were investigated and compared. As a result, the thin fi lms with Ni substitution of 30 at% and Co substitution of 28 at% showed the best magnetic properties, and the maximum saturation magnetization was 78 emu/cm3 in the thin film with Co substitution. Normalized coercive force of perpendicular to the film plane by coercive force of parallel to the fi lm plane(perpendicular magnetic anisotropy)and the Curie temperature were 4.1 and more than 475°C, respectively in the thin fi lm with Ni substitution.
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