Chemical vapor deposition (CVD) process composes a complex system, where chemical reaction and heat and mass transfer interact with each other. And these macro-scale phenomena are deeply related to the micro-scale mechanics. Hence, multi-scale analysis is required to understand these complicated interactions. In the previous report, the new pair potential model for SiH
4-H
2 and SiH
4-SiH
4 interaction was successfully determined using ab initio molecular orbital calculations. And the validity of the model was evaluated by calculating the viscosity of SiH
4 using the molecular dynamics simulations. The result shows the good agreement between the experiments and the numerical calculations. As the next step of the multi-scale analysis, the total cross section model and the scattering angle model for SiH
4/H
2 system are constructed in this report. Many binary collisions for SiH
4-H
2 and SiH
4-SiH
4 are calculated by classical trajectory (CT) calculations with the various initial conditions. Through the statistical analysis, the total collision cross section model is constructed as a function of the relative translational energy only. And the probabilistic scattering model for polyatomic molecules is developed by modifying the classical scattering theory. At last, the validity of these models is confirmed through the comparison of the differential cross section.
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