Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
Online ISSN : 1882-1022
Print ISSN : 0914-5400
ISSN-L : 0914-5400
原料連続供給型引き下げ法によるBi12GeO20単結晶の育成
上田 隆全樋口 幹雄小平 紘平
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2001 年 109 巻 1271 号 p. 627-630

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Transparent and crack-free Bi12GeO20 single crystals have been grown by the pulling-down method with a continuous powder feed system. Bi-rich feed powder having a composition of 14.1mol% GeO2 is favorable to obtain stoichiometric crystals. Striation-free crystals with an increased transmittance are grown under a small temperature gradient. The shape of the solid-liquid interface during the crystal growth is nearly flat, which is advantageous to avoid core formation. Average dislocation density is estimated to be 2×104/cm2, which is comparable to that of Bi12GeO20 crystals grown by the conventional Czochralski method.
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