MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Interstitial Oxygen and Dopant Atoms Arrangement in Tin-Doped Indium Oxide
Talgat M. InerbaevRyoji SaharaHiroshi MizusekiYoshiyuki KawazoeTakashi Nakamura
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2007 Volume 48 Issue 4 Pages 666-669

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Abstract

In the present study an attempt to clarify discrepancy between experimental and theoretical results for preference substitution of d or b indium cation sites by tin is performed. For this purpose, the density functional calculations for a number of oxidized and reduced states of ITO with different configurations for tin substituted cation sites are carried out. For reduced states the probability for tin substituents to occupy the b positions is significantly larger than the same value for the d sites. These results indicate that the more favorable occupancy of either b or d cation positions by tin substituent depends on the way of the defect formation.

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© 2007 Society of Nano Science and Technology
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