Abstract
Interfacial microstructure of a double-layer Cu film, composed of an under-layer deposited on SiO2 in Ar-10vol% O2 followed by an upper layer deposited in pure Ar, was investigated for thin film conductor tracks for large and high-definition liquid crystal displays. Thee layer deposited in Ar-10vol% O2 has fine-grain, and contains Cu and Cu2O. Detailed analysis shows the interface between the under layer and SiO2 substrate isn't flat, but concavity and convexity. Addition of oxygen to the discharge gas generates Cu2O in the under-layer. Cu2O dissolves in the SiO2 and forms CuO-SiO2 eutectic. The dissolution of Cu2O in SiO2 must increase anchor effect and the adhesive strength.
