Abstract
The charge shift correction which utilizes the 4f7/2 binding energy (Eb) of evaporated gold as the reference is investigated for BN, InP, SiO2 and Al2O3 substrates. The change in the final-state relaxation process in low coverage region (_??_2 monolayers) produces inaccuracy of as much as 1eV of binding energy, determined by the gold evaporation method. It is possible to use the 4f7/2 binding energy of evaporated gold as an energy reference in X-ray photoelectron spectroscopy in the coverage region above 2 monolayers.
