1991 年 7 巻 5 号 p. 779-783
This paper reports a technique for the measurement of insulators by secondary ion mass spectrometry (SIMS). An insulating specimen buried in a circular hole on a conducting disk was measured by using a standard Cameca IMS-3F ion microscope under the normal working conditions with a negatively charged oxygen primary beam. The technique is simple and allows the drastic increase of secondary ion intensity up to three orders of magnitude compared to a conventional specimen mounting. Reproducibility of secondary ion intensity was satisfactory for quantitative analysis.