抄録
Xe-doped and F-doped amorphous SiOx double layer thin films were fabricated using a RF magnetron sputtering method, and the phase transition from semiconductor to insulator was induced by DC voltage impression. The dose of Xe atoms in the SiOx films was found to be controllable by changing the sputtering power and the distance between the target and substrate. The surfaces of the films were smooth, and the DC electric properties of the films were investigated. The SiOx double layer with a thickness of 0.82 µm in total showed 4 to 20Ω below DC 5 V, and the phase transition occurred upon applying DC 5V. The resistance of the films suddenly and dramatically increased to more than 1 MΩ. The phase change occurred when either plus or minus voltage was applied to the Xe-doped SiOx film. Such a bipolar manner indicates that the charge transfer from Xe to F atoms is not essential in the mechanism and that two-layer contexture of the SiOx films might be unnecessary. The possible mechanism and future strategies to understand the nature of this material are discussed.
