2013 年 12 巻 p. 1-8
GaN HEMT has been expected to satisfy requirements being used in space as amplifying devices of future high-efficiency onboard SSPAs due to its excellent properties such as robustness in a harsh environment, applicability to high frequency and high power operation. However, in X-band, the most important frequency band for space communication at this moment, evaluation of GaN HEMT to prove the space usage has not been conducted yet because ensuring a steady supply of X-band GaN HEMT devices is still difficult due to current collapse phenomena. Therefore, in this research, evaluation of RF characteristics affected by operational conditions and space environmental testing of X-band HPA using COTS GaN HEMT was conducted to secure the space usage.