Abstract
A Reactive Ion Beam Etching (RIBE) system in our laboratory had good characteristics for mechanical etching but a poor rate for reactive etching. We have improved so that Reactive Ion Etching (RIE) is able to work with RF of 13.56 MHz in the same system. The improved parts are mainly a etching stage for RF injection and a cold trap with liquid nitrogen. As a result, the RIE operates at gas pressure with wide range of 20 - 500 [mTorr]. The etch rate for Niobium Nitride (NbN) is about 100 [A/min] at 20 [SCCM] of CF4 gas.
