Preparation and Properties of Solution Grown Epitaxial p-n Junction in CdTe

Abstract

The technique of epitaxial growth from solution has been applied to CdTe. Initial experiments were carried out to determine the solvent which gave the epitaxial growth. Te, In, Sn, Ga, Sb, and Bi were used as the solvents. When used Bi and Sb, the grown layer became epitaxial and single crystalline. p-n Junction was made p type Au or P doped grown layer on n type In doped wafer. The layer was typically 10 μ thick.