Dopant Distribution Analysis in Semiconductor Materials by Pulsed-Laser Atom Probe Tomography(Current Topics)

Abstract

Atom probe tomography is a powerful method for obtaining three-dimensional positions of individual atoms in materials with nearly atomic-scale resolution, by removing atoms one by one from the apex of needle specimens using field evaporation. Recent development of pulsed-laser atom probe tomography enables to expand not only to metals but also to semiconductor and insulator materials. In this article, dopant distribution analysis in semiconductor materials including metal-oxide-semiconductor transistors is presented.