Butsuri
Online ISSN : 2423-8872
Print ISSN : 0029-0181
ISSN-L : 0029-0181
Dopant Distribution Analysis in Semiconductor Materials by Pulsed-Laser Atom Probe Tomography(Current Topics)
Koji InoueYasuo ShimizuHisashi Takamizawa
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JOURNALS OPEN ACCESS

2012 Volume 67 Issue 9 Pages 645-649

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Abstract

Atom probe tomography is a powerful method for obtaining three-dimensional positions of individual atoms in materials with nearly atomic-scale resolution, by removing atoms one by one from the apex of needle specimens using field evaporation. Recent development of pulsed-laser atom probe tomography enables to expand not only to metals but also to semiconductor and insulator materials. In this article, dopant distribution analysis in semiconductor materials including metal-oxide-semiconductor transistors is presented.

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© 2012 The Physical Society of Japan
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