Effect of diode operating temperature on conducted-noise spectrum for CCM DC–DC boost converter

抄録

This study focuses on the effect of diode operating temperature on the conducted noise, induced by the reverse recovery current of the diode, of the continuous-current-mode boost DC–DC converter for the Si PiN diode (PiND) and SiC Schottky barrier diode (SBD). The result shows that the SiC SBD exhibits invariant switching behavior and predicts conducted emission level at the operating temperature. The peak reverse recovery current of the Si PiND increases at high operating temperatures. This study indicates that the temperature can affect the noise spectrum distribution for the variation of reverse recovery time and ringing oscillation.