Proceedings of JIEP Annual Meeting
The 25th JIEP Annual Meeting
Session ID : 9C-12
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The 25th JIEP Annual Meeting
Electroless Ni/Pd/Au Plating for Cu Wire Bonding
*Yoshinori EjiriTakehisa SakuraiHiroshi KurokawaKuniji SuzukiYoshiaki TsubomatsuShuuichi HatakeyamaShigeharu ArikeYoshinori ArayamaYukihisa HiroyamaKiyoshi Hasegawa
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Abstract
We investigated the Cu and Au wire bonding reliability in electroless Ni/Au plating, electroless Ni/Pd/Au plating and electrolytic Ni/Au plating on the semiconductor package substrate. We found that the minimum Au thickness of electroless Ni/Au and electrolytic Ni/Au for the good wire bonding reliability is 0.3 micrometer. In the case of electroless Ni/Pd/Au, the minimum Au thickness is 0.1 micrometer. These results indicate that electroless Ni/Pd/Au has an advantage on Au thickness as compared with electroless Ni/Au and electrolytic Ni/Au for Cu wire bonding.
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© 2011 The Japan Institute of Electronics Packaging
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