Erratum: Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices [e-J. Surf. Sci. Nanotech. Vol. 15, pp. 127-134 (2017)]

Etsuo Fukuda; Tetsuo Endoh; Takashi Ishikawa; Koji Izunome; Kazutaka Kamijo; Moriya Miyashita; Takao Sakamoto; Hiroyuki Kageshima

doi:10.1380/ejssnt.2018.375

Errata

Erratum: Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices [e-J. Surf. Sci. Nanotech. Vol. 15, pp. 127-134 (2017)]

Etsuo Fukuda, Tetsuo Endoh, Takashi Ishikawa, Koji Izunome, Kazutaka Kamijo, Moriya Miyashita, Takao Sakamoto, Hiroyuki Kageshima

Author information

Keywords: Oxygen, Oxidation, Silicon oxides, Single crystal surfaces, Surface roughness, Semiconductor-insulator interfaces, Si(100)

JOURNAL FREE ACCESS

2018 Volume 16 Pages 375

DOI https://doi.org/10.1380/ejssnt.2018.375

Original Article : e-JSSNT Vol. 15, pp. 127-134 (2017)

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Abstract

The publisher would like to apologize for errors that occurred in the article [E. Fukuda et al., e-J. Surf. Sci. Nanotech. 15, 127 (2017)] published on 14 December, 2017. [DOI: 10.1380/ejssnt.2018.375]

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