Abstract
In this article [M. Suemitsu, et al., e-J. Surf. Sci. Nanotech. 7, 311 (2009)], we discussed formation of graphene on Si substrates assuming that the pre-grown 3C-SiC films on the Si(110) substrate are (111)-oriented. Later investigations suggest, however, that the 3C-SiC films used in this study are dominated by (110)-oriented portion, with the (111)-orientation being the minority. The comments on the (111)-orientation of the 3C-SiC films should therefore be omitted. This revision, however, does not affect our observation of graphene formation on Si substrates and the analyses thereon. [DOI: 10.1380/ejssnt.2009.700]
