Erratum: Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate [e-J. Surf. Sci. Nanotech. Vol. 7, pp. 107-109 (2009)]

Yu Miyamoto; Hiroyuki Handa; Eiji Saito; Atsushi Konno; Yuzuru Narita; Maki Suemitsu; Hirokazu Fukidome; Takashi Ito; Kanji Yasui; Hideki Nakazawa; Tetsuo Endoh

doi:10.1380/ejssnt.2009.699

Errata

Erratum: Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate [e-J. Surf. Sci. Nanotech. Vol. 7, pp. 107-109 (2009)]

Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Atsushi Konno, Yuzuru Narita, Maki Suemitsu, Hirokazu Fukidome, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh

Author information

Yu Miyamoto
Research Institute of Electrical Communication, Tohoku University, Japan
Hiroyuki Handa
Research Institute of Electrical Communication, Tohoku University, Japan
Eiji Saito
Research Institute of Electrical Communication, Tohoku University, Japan
Atsushi Konno
Research Institute of Electrical Communication, Tohoku University, Japan
Yuzuru Narita
Department of Electrical Engineering, Yamagata University, Japan
Maki Suemitsu
Research Institute of Electrical Communication, Tohoku University, Japan
CREST, Japan Science and Technology Agency, Japan
Hirokazu Fukidome
Center for Interdisciplinary Research, Tohoku University, Japan
Takashi Ito
Center for Interdisciplinary Research, Tohoku University, Japan
Kanji Yasui
Department of Materials Science and Technology, Hirosaki University, Japan
Hideki Nakazawa
Department of Materials Science and Technology, Hirosaki University, Japan
Tetsuo Endoh
Center for Interdisciplinary Research, Tohoku University, Japan

Keywords: Silicon carbide, Heteroepitaxy, Organosilane, Gas-source MBE, Graphene

JOURNAL FREE ACCESS

2009 Volume 7 Pages 699

DOI https://doi.org/10.1380/ejssnt.2009.699

Original Article : e-JSSNT Vol. 7, pp. 107-109 (2009)

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Abstract

In this article [Y. Miyamoto, et al., e-J. Surf. Sci. Nanotech. 7, 107 (2009)], we discussed formation of graphene on Si substrates assuming that the pre-grown 3C-SiC films on the Si(110) substrate are (111)-oriented. Later investigations suggest, however, that the 3C-SiC films used in this study are dominated by (110)- oriented portion, with the (111)-orientation being the minority. The comments on the (111)-orientation of the 3C-SiC films should therefore be omitted. This revision, however, does not affect our observation of graphene formation on Si substrates and the analyses thereon.[DOI: 10.1380/ejssnt.2009.699]

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