Relationship Between Resistance Modulation and Magnetoelectric Direction in Cr₂O₃/ultrathin (La,Sr)MnO₃ Heterostructure

Abstract

We investigated the relationship between the electric-field-induced resistance change and the magnetoelectric effect of a Cr₂O₃/La_0.7Sr_0.3MnO₃ (LSMO) magnetic heterostructure. When this heterostructure was field cooled, its magnetization curves exhibited a positive shift due to an exchange bias. Because of the exchange behavior, the LSMO film resistance changed when an electric field was applied to the Cr₂O₃ gate. This resistance change is probably due to interaction modulation of the magnetoelectric interface between the Cr₂O₃ and LSMO films. [DOI: 10.1380/ejssnt.2011.138]