日本液晶学会討論会講演予稿集
Online ISSN : 2432-5988
Print ISSN : 1880-3490
ISSN-L : 1880-3490
2012年 日本液晶学会討論会
セッションID: 2b08
会議情報

2b08 高次液晶相を利用した均一かつ高耐熱性を有する多結晶薄膜の作製とFET応用(分子配向エレクトロニクス,口頭発表,2012年日本液晶学会討論会)
*飯野 裕明臼井 孝之小堀 武夫半那 純一
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会議録・要旨集 フリー

詳細
抄録
We have developed a new soluble liquid crystalline FET material of beozothienobenzothiophene derivative having highly ordered liquid crystal phase and investigated the polycrystalline thin films fabricated at various temperatures. It was found that uniform thin films were fabricated not only at high temperature over 100℃ but also at a low temperature of 65℃. And the FET fabricated with the polycrystalline thin films exhibited a high mobility over 5 cm^2/Vs, which was hardly changed even after the thermal stress up to 140℃ for 5 min. This new material is very promising for practical applications of FET.
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© 2012 日本液晶学会
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