抄録
Charge carriers in randomly aligned and randomly oriented molecules are affected on their random hopping transport by locally different carrier-dipole interaction (Gaussian disorder model proposed by Bassler). In liquid crystalline semiconductors, however, the disorder mechanism depends on their structural order of liquid crystals. High performance of carrier transport is achieved in these ordered materials. In this research, we demonstrate how the mechanism affects the performance of the device materials exhibiting liquid crystalline phase. In OFETs, for example, we showed that the order of liquid crystalline alignments not only provide high mobility but also decrease the effect of energetic disorder from the interface of gate insulator on OFETs performance.
