A 0.017µJ/sample 313K sample/sec Clamped Sensing-Based Time Domain CMOS Temperature Sensor

Se-Chun Park; Sung-Dae Choi; Hyeonseok Hwang; Byeonghak Jo; Seung-Baek Park; Soo-Won Kim

doi:10.1587/elex.12.20141133

This article has now been updated. Please use the final version.

A 0.017µJ/sample 313K sample/sec Clamped Sensing-Based Time Domain CMOS Temperature Sensor

Se-Chun Park, Sung-Dae Choi, Hyeonseok Hwang, Byeonghak Jo, Seung-Baek Park, Soo-Won Kim

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Keywords: CMOS temperature sensor, Clamped sensing, PTAT, Temperature coefficient

JOURNAL FREE ACCESS Advance online publication

Article ID: 12.20141133

DOI https://doi.org/10.1587/elex.12.20141133

The final version of this article is now available: Vol. 12 (2015), No. 5 pp. 20141133-20141133

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Abstract

This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (T_PTAT); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts T_PTAT to digital codes. The proposed temperature sensor consumes a 0.017μJ/sample at a conversion rate of 313Ksample/sec.

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