The implantation of ions into SiC is an indispensable process in semiconductor fabrication, which is the base material. Conventional ion implantation methods require high voltages to accelerate ions. Therefore, we aim to generate quadruply charged aluminum ions (Al4+) using an electron cyclotron resonance (ECR) ion source, which is relatively inexpensive and capable of generating multi-charged ions. The experiments were conducted using magnesium, which can evaporate at lower temperatures than aluminum. To improve the charge state of the generated multi-charged ions, we increased the amount of beam current of the multi-charged ions via the gas mixing method using helium gas as the process gas, which is lighter than the magnesium ions generated. Moreover, the bias disk method, in which a negative voltage is applied to an aluminum plate in the plasma chamber, was carried out. Quadruply charged magnesium ions (Mg4+) were detected at 863 nA. Since Mg4+ and Al4+ have similar ionization energies, we believe that Al4+ can be generated by increasing the temperature of the ceramic electric tube furnace to the evaporation temperature of aluminum using the existing experimental method.
