抄録
We investigated the photovoltaic properties of Cu(In,Ga)Se2 (CIGS) solar cells having varying CdS thicknesses ranging from 15 to 60 nm. CIGS solar cells having absorbers fabricated with potassium fluoride post-deposition treatment (KF-PDT) were compared with the as-grown samples. The reduction in CdS thickness decreased the open circuit voltage (VOC) and fill factor (FF) due to the increased minority carrier recombination. The increase in the ideality factor and reverse saturation current was observed in the solar cells having reduced thickness of CdS buffer layer. The reduction in VOC and FF was mitigated by introducing the KF-PDT. Analysis of Nyquist plots revealed that the influence of constant phase element (CPE) was small and independent of the thickness of CdS buffer layer. The capacitance quality of the pn junction of the CIGS solar cells was preserved even with the thin CdS buffer layer having thickness of ~15 nm.
