表面障壁型Si検出器の安定化

抄録

  The reverse current characteristics of the surface-barrier diodes depend strongly upon the surface treatment and the atmosphere in which the detector was fabricated and stored. Reduction of the surface leakage current was accomplished by evaporating some oxide(WO₃ or Sn₂) on the surface of n-type silicon before gold electrode deposition. The reverse current of the order of 10^-7A/cm² at the bias of 300V was thus obtained. The stability of the detectors has been satisfactory at least for 24 hours when they are operated in vacuum. Surface treatment of p-type silicon detectors is also described.