特集 「原子力発電所事故からの復興を目指した放射線機器開発の最新動向」
耐放射線性半導体デバイスの開発
2014 年 39 巻 4 号 p. 185-188
詳細
2014 年 39 巻 4 号 p. 185-188
In this work, we compared the radiation hardness of SiC Buried Gate Static Induction Transistors (SiC-BGSITs) and Si-based switching devices up to the absorbed dose of 10 MGy(SiO2). The on-voltage Von of Si-IGBT degraded excessively at the early stage of the irradiation (>～0.1 MGy(SiO2)) due to the bulk damage produced by Compton electrons like the gain degradation in Si bipolar transistors. The threshold voltage Vth of Si-MOSFET was very sensitive against the radiation due to the competing mechanism between the generation of the hole traps in the gate SiO2 and the SiO2/Si interface states. Moreover, the breakdown voltage VBR and leak current Ileak of MOSFET degraded significantly against the absorbed dose. While, the electrical properties of SiC-BGSIT was very stable even after the irradiation of 10 MGy(SiO2).
