2008 Volume 128 Issue 6 Pages 861-864
The dependences of source resistance, Rs, transconductance, gm, gate capacitance, Cgs, Cgd, and cutoff frequency, fT, of InP-based HEMTs on an InAlAs barrier layer thickness, d, were investigated. We divided Rs into 4 elements and analyzed the effect of thinning a barrier layer. The resistance originated from the large band discontinuity between InAlAs and InGaAs decreased by thinning a barrier layer, while the resistance in the gate-recessed region increased. As a result, InP-based HEMT with d=10 nm showed lowest Rs. On the other hand, gm increased monotonically with d, due to the reduction of the gate to channel distance, and gmint reached to 2.6 S/mm at d=5 nm. We also estimated fT by using small-signal measurements. fT increased with the reduction of d, which results in the improvement in noise characteristics.
The transactions of the Institute of Electrical Engineers of Japan.C
The Journal of the Institute of Electrical Engineers of Japan