マイクロリソグラフィ用超狭帯域化F₂レーザシステムの実用化研究

抄録

According to the recent roadmap of semiconductor fabrication, it is predicted that the semiconductor market will demand 70nm node devices from 2004 or 2005. ASET (Association of Super Advanced Electronics Technologies) started “The F₂ Laser Lithography Development Project” in March 2000, developing the ultra line-narrowed F₂ laser system for dioptric design exposure tools. The final target of this project is to achieve a F₂ laser spectral bandwidth of 0.2pm (FWHM) at a repetition rate of 5000Hz and an average power of 25W. In this work, we have developed an engineering laser system consisting of an oscillator laser and an amplifier. With this laser system, we have tested two arrangements: MOPA(Master Oscillator Power Amplifier) and Injection Locking. Locked time ranges for injection locking system and MOPA were 40ns and 10ns, respectively, with stable output energy. A spectral bandwidth of 0.2pm and an energy stability (3 σ) of less than 5% at a repetition rate of 1000Hz with an average power of 14W was achieved for injection locked operation.