抄録
Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue, green and white light-emitting diodes and long-lived violet laser diode and so forth. The high electron saturation velocity in GaN is also suitable for application in high-speed/high power electronic devices. All of these nitride-based devices are the most environmentally-friendly ones available. They are tough and should enable a tremendous saving in energy. Further progress in the area of crystal growth and device engineering is necessary for the development of new frontier devices based on nitride semiconductors.
