Abstract
This paper describes in-process measurements of secondary electron emission coefficient (SEEC) during plasma immersion ion implantation for a plane target. In the plane target, trajectories of secondary electrons (SEs) emitted from the target strongly depends on the plasma conditions as well as amplitude of pulse voltages applied to the target because of variation of a curvature radius of the sheath formed around the target. Therefore, absolute measurements of the SE current as well as of the SEEC were difficult to be performed. However calibration of a SE detector using a plane target with very high SEEC enabled the SEEC measurements. The measurements of the SE current revealed that the sheath curvature was affected by the plasma condition and the target shape. This calibration will be useful for SEEC measurements of arbitrary-shaped target.
