Abstract
Molybdenum silicide (MoSi2) has high electrical conductivity as much as metal and high chemical stability than SiC in various atmospheres. Therefore, many kinds of MoSi2 bulk-type heaters are practically used for operation up to 1800°C, which is higher than that of SiC heaters. However, MoSi2 is fragile at room temperature and has low creep resistance at high-temperatures. The purpose of this study is to fabricate heaters using thin films of MoSi2, which are deposited on alumina plate-type substrates or crucible-type substrates by RF magnetron sputtering and to evaluate their characteristics. MoSi2 thin films were deposited on the outside of the alumina crucible, then Pt wires were attached using Pt paste by sintering in vacuum. This MoSi2 thin film heaters showed linear R-T characteristics and uniform heating state. They also showed good controllability of voltage and stability of power-T characteristics to operate up to 1000°C.
