抄録
Etching characteristic LiNbO3 single crystal has been investigated using plasma RIE (Reactive Ion Etching) with mixture gases of CF4/Ar, CF4/H2, CF4/Ar/H2. The etched surface was evaluated by means of atomic force microscopy. The etched rate for -Z surface of LiNbO3 single crystal was higher than +Z surface using CF4/Ar and CF4/H2 mixture gases. Possibility of the deep etching at the boundary between -Z surface and +Z surface for partially polarization-reversed LiNbO3 without mask was investigated. The best condition of the deep etching was obtained by using CF4/H2 mixture gas. The value of aspect ratio is approximately 1.0 on this condition.
