IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
Paper
Preparation and Characterization of Electorodeposited of In-doped CdTe Semiconductor Films
Tomoari NishioMakoto TakahashiShinpei WadaToshiyuki MiyauchiKoichi WakitaHideo GotoShoji SatoOsamu Sakurada
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2007 Volume 127 Issue 2 Pages 97-102

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Abstract

In-doped n-CdTe thin films have been electrodeposited at -0.35V vs. Ag/AgCl from a nitric acid solution of pH 1 containing 0.05 mol/dm3 (M) Cd(NO3)2, 0.5mM TeO2, and various concentration In(NO3)3. Deposited films were annealed at 350°C under N2 flow. The films were characterized with X-ray diffraction, energy-dispersive X-ray spectroscopy, scanning electron microscope(SEM), and a reflectance meter. The conductivity and the carrier concentration of the films were measured using the van der Pauw method and Hall effect measurement at room temperature. This is the first study to investigate the effect of the In(NO3)3 concentration on the composition, the crystallinity, and the electric properties of In doped CdTe films prepared by electrodeposition. The conductivity of the CdTe films linearly increases from 9.3 to 27.4 S/cm-1and the electron concentration [log(n/cm3)] increases from 3.9×1018 to 2.8×1019 cm-3 as the In(NO3)3 concentration rises from 1×10-2 to 1×10-1 M .

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© 2007 by the Institute of Electrical Engineers of Japan
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