2009 年 129 巻 4 号 p. 257-262
Gate driving circuit by magnetic chain mechanism for series operation of field effect transistors was developed. Serial connection of field effect transistors was employed to generate pulses of high voltage and a short rise time. The whole circuit is divided into many cells containing a transistor and an associated gate driving circuit, and the cells are magnetically triggered successively by applying an external trigger pulse on the first cell. The switching characteristics of the cells were investigated at voltages up to 5 kV, and the rise time of the output voltage was 22 ns at 500Ωload.
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