2010 Volume 130 Issue 10 Pages 949-954
The hardness and Young's modulus of the carbonaceous films formed by focused ion-beam-assisted chemical vapor deposition using Au or Si ions, before and after 800 °C annealing, were compared with those formed using Ga ions in the process. It is found that the hardness of the film formed using Au ions was harder than those formed using Si and Ga ions before annealing. After annealing, however, that formed using Si ions showed the largest value in hardness. From the X-ray photoelectron spectroscopy measurement, the implanted Si atoms were combined with carbon atoms chemically, indicating the hardening of the Si-containing carbonaceous films after annealing.
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan