抄録
A high performance organic thin film transistor (OTFT) structure is proposed based on a device simulation, which enables higher current gain as compared with a conventional device structure. The device simulator makes it possible to derive current-voltage (I-V) characteristics, potential distribution and carrier concentration inside a device by solving Poisson's equation and continuity equation. It is made clear that the device performances improve more than twice to three hundred times by inserting high impurity concentration region under the source drain contact area. The cause of the inferior characteristics of conventional devices is attributed to the deficiency of carriers in the channel region, resulting to a very high potential drop at the source-channel interface. These results should pave the way to very high performance OTFT devices.
