Abstract
Fullerene (C60)-based n-channel field effect transistors (FETs) have been fabricated on various polymeric gate insulators as an alternative to conventional oxide gate insulators. The field effect mobility was improved to higher than 0.1cm2/Vs using proper gate insulator and by the heat-treatment in a vacuum, which was aimed for oxygen de-doping. The C60 films deposited on polymer gate insulator at room temperature become amorphous even after the heat-treatment. However, the field effect mobility of C60 films markedly depended on the polymer gate insulator materials, and it was attributed to the wettability of C60 on polymer and the surface roughness on gate insulators. The very high field effect mobility of as high as 0.48cm2/Vs was successfully obtained when C60 was deposited on aromatic hydroxyl-free polymer gate insulator (CycloteneTM, BCB) film.
