電気学会論文誌A(基礎・材料・共通部門誌)
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
論文
Si表面近傍におけるボロンクラスタの安定位置とそのSTM像
伊藤 俊佑丸泉 琢也諏訪 雄二
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ジャーナル フリー

2011 年 131 巻 6 号 p. 478-483

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抄録
We conducted a first-principles examination to determine the most stable position of an icosahedral B12 cluster near a Si(001) surface. We discovered that such a cluster is most stable when its center is located at the fourth layer position from the Si top surface where a Si dimer sits directly overhead. Scanning tunneling microscopy (STM) simulation revealed that Si dimers above the B12 cluster are distinguishable from other dimers in STM images of low sample bias voltages.
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© 電気学会 2011
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