2012 Volume 132 Issue 10 Pages 827-832
The structure and tunnel magneto-resistance of (Fe-Ni or Fe-Co)-(Mg-F) nano-granular thin films were investigated. The films were prepared by a tandem deposition method, using Fe-Ni or Fe-Co alloy and MgF2 insulator targets. A granular structure was found to be consisted of Fe-Ni or Fe-Co based nano-granules surrounded by thin intergranules of Mg based fluoride which were crystallized with a MgF2 structure. These films show tunnel-type magnetoresistance which is caused by the film structure. The GIGS® (Granular-in-Gap-Sensor) consisting of the (Fe-Co)-(Mg-F) nano-granular thin film filled into a narrow gap of soft magnetic a-CoFeSiB thin film was prepared. GIGS® has large electrical resistance (10kΩ-10MΩ) because of high electrical resistivity of metal-nonmetal nano-granular film. The large electric resistivity causes the reduction of the electricity consumption.
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan