抄録
Surface treatment of GaN by pulsed atmospheric microplasma was experimentally investigated. Microplasma was generated with a pair of electrodes which covered with dielectric layer, at relatively low discharge voltage of around 1 kV, and advantage of reducing the power and downsizing the entire plasma system. Electrodes were faced each other with a spacer (thickness 100 um) in between. Streamers were generated between the electrodes, which generate various radicals and ions that could affect a target surface. Contact angles and an analysis by X-ray Photoelectron Spectroscopy (XPS) were measured before and after microplasma to refer GaN surface. Discharge voltage was -1.3 kV, frequency was 24 kHz, treatment time was 10s.
