2013 Volume 133 Issue 10 Pages 532-536
Directed self-assembly (DSA) lithography are recently getting in the spotlight as one of the most promising new generation lithography (NGL) candidates, which have a potential to fabricate semiconductor device patterns down to sub-30nm. In this report, latest experimental and simulation results of contact hole shrink process using the DSA are demonstrated.
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan