抄録
We deposited SiCN thin films by RF plasma CVD (Chemical Vapor Deposition) method using a mixture of Tetramethylsilane (TMS), nitrogen, and hydrogen gas. Deposited films were measured some properties with Fourier-Transform Infrared Spectroscopy (FT-IR), X-ray Photoelectron Spectroscopy (XPS), Ellipsometry and Atomic Force Microscope (AFM). We found that the temperature of substrate increased elimination and absorption reaction on the surface, and a fine film could be deposited at the temperature of 973K. To deposit SiCN with lower temperature, we changed H2 flow rate. As results, we found that H2 flow rate had great influence on the efficiency of decomposition of TMS. Moreover, the roughness of substrate was affected by the mixture rate of TMS. We could obtain the films nearly similar to the 973K ones at the state of 100Pa of pressure, 773K of substrate temperature, 80sccm of H2 flow rate, and TMS mixture rate of 3% to 5%. In particular, 5% of TMS mixture rate could be considered as the best condition on this experiment.
