IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
Paper
Simplified Void-free Encapsulation Technique for Power Semiconductor Devices using Silicone Gel
Masahiro SatoAkiko KumadaKunihiko HidakaKeisuke YamashiroYuji HayaseTetsumi Takano
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2014 Volume 134 Issue 11 Pages 572-577

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Abstract
The operating voltage of power electronics modules is increasing and it results in higher demands on the electrical insulation. Therefore, it is essential to overcome weak points in the insulation system. The weak points were specified by observing the trace of partial discharges (PDs) by a microscope. When the applied voltage is slightly above partial discharge inception voltage, streamer inception occurred at indented rims of the metallization. Silicone gel is used to encapsulate power electronic circuits. Sometimes the degassing is imperfect and voids may form. These voids induce PDs and limit the reliability of the module. As the indented rims may not be degassed and may contain voids, a simplified encapsulation technique is discussed quantitatively and was verified experimentally. The proposed encapsulation technique could reduce the number and amplitude of PDs.
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© 2014 by the Institute of Electrical Engineers of Japan
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