ナフテン酸銅, ナフテン酸亜鉛およびオクチル酸スズを出発原料に用いたCu₂ZnSnS₄薄膜の作製

抄録

Cu-Zn-Sn precursor films were prepared by spin-coating method. Copper naphthenate, zinc naphthenate, and tin octoate were used as starting materials. The precursor films were sulfurized in Ar+H₂S (10%) atmosphere at treatment temperature of 400-600°C for 90 minutes.