抄録
We have proposed a convenience fabrication technique of carbon nano-tubes (CNTs) transistor. Dip coating method using metallic solution was employed to deposit metal catalysts of CNTs on the source and drain electrodes on SiO2 coated Si substrate at a low temperature. This method does not require vacuum system and a long process time. After the CNTs fabrication by chemical vapor deposition, we evaluated the morphology of CNTs by scanning electron microscopy and their electrical property as a CNT field-effect-transistor (FET). The CNTs formed suspended bridges between the source and drain electrodes. Field effect mobility of the CNT-FET was measured to be 3000 cm2/Vs from its transfer curve. On the basis of the electrical property, the CNT-FET with high field effect mobility can be obtained.
