バイアス通電によるミアンダコプレーナ薄膜磁界センサの開発

抄録

We propose a new simple method to directly apply dc current to the CoNbZr/Cu film of a sensor. A very sensitive thin film sensor was developed using a meandering coplanar line with biasing conductors fabricated from SrTiO film (0.75 µm thick), amorphous Co₈₅Nb₁₂Zr₃ film (1.0 mm × 2.45 mm, 1 µm thick) and Cu/Cr film (2 µm/0.1 µm). We discuss direct bias to CoNbZr film and Cu film under a CoNbZr film and compare it with an application of bias magnetic field. Good sensitivity (phase change over 100 degrees/Oe) was obtained by the proposed method.