3.3 kV SiC-MOSFETの電気的特性評価と誘導性パルスパワー電源への応用

抄録

Electrical characteristics of a silicon carbide (SiC)-MOSFET with the blocking voltage of 3.3 kV are evaluated, and an inductive energy storage (IES) pulsed power generator driven by the SiC-MOSFET is developed. The experiments are carried out using a circuit consisted of a capacitor and a resistor. The device temperature is controlled using a heater. The maximum pulsed current of 165 A with an input voltage of 80 V, the turn-on time of 31 ns and turn-off time of 22 ns are obtained at room temperature. The turn-on and turn-off times increase with the resistance of the evaluation circuit. On-resistance of 80 mΩ is obtained at room temperature and increases with the device temperature. IES pulsed power generator consists of a capacitor, a pulsed transformer and the SiC-MOSFET used as an opening switch. The maximum output of 9.8 kV and pulse width of 76 ns at the full-width-at-half-maximum are obtained with a charging voltage of 50 V and a charging time of 3 µs.