2019 Volume 139 Issue 3 Pages 174-180
This paper describes an integral equation to calculate the stochastic fluctuation of partial discharge (PD) occurrence under sinusoidal voltage stress based on a simple PD model. For the simplicity of calculation we used a symmetric PD model for positive and negative PD characteristics with measurements of a symmetric electrode system. In this paper we made a progress in calculation using asymmetric PD characteristics using different PD parameters for positive and negative PDs. The stochastic behavior of PD fluctuation is assumed to arise from the fluctuation of PD delay time after the inception voltage and the fluctuation of PD inception voltage (PDIV) as before but different parameters for positive and negative ones. The authors solved the equation with numerical method and showed several φ-n, φ-q distribution patterns as before but more realistic characteristics.
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan