Electric Charge Accumulation Properties in Packaged Insulation Layer of Power Electronic Devices by using Direct Current Integrated Charge Method

Abstract

This paper describes the electric charge accumulation properties in package insulation layer of power electronic devices (IGBT module and diode bridge) under conditions of DC voltage application (100 V to 4000 V) and temperature conditions (room temperature to 80℃) by using a direct current integrated charge method (DCIC-Q(t)). The DCIC-Q(t) equipment is connected in series to the sample under DC voltage source. The DCIC-Q(t) is contained all information of charging currents to the test sample under applied rectangular wave voltage, such as the integrated charge of initial current, Q₀-=C_sV_dc, the integrated charge of absorption current, Q_abs, and the integrated charge of leakage current, Q_leak. We discuss the charge accumulation properties from Q(t) and the ratio of Q(t)/Q₀ in the electronic devices under various DC voltage and temperatures. The DCIC-Q(t) equipment is useful to evaluate the electric charge accumulation properties in completed power electronic devices.