パワーモジュール絶縁層の電荷蓄積の電流積分電荷法による評価

抄録

This paper describes the electric charge accumulation properties in package insulation layer of power electronic devices (IGBT module and diode bridge) under conditions of DC voltage application (100 V to 4000 V) and temperature conditions (room temperature to 80℃) by using a direct current integrated charge method (DCIC-Q(t)). The DCIC-Q(t) equipment is connected in series to the sample under DC voltage source. The DCIC-Q(t) is contained all information of charging currents to the test sample under applied rectangular wave voltage, such as the integrated charge of initial current, Q₀-=C_sV_dc, the integrated charge of absorption current, Q_abs, and the integrated charge of leakage current, Q_leak. We discuss the charge accumulation properties from Q(t) and the ratio of Q(t)/Q₀ in the electronic devices under various DC voltage and temperatures. The DCIC-Q(t) equipment is useful to evaluate the electric charge accumulation properties in completed power electronic devices.