Application of Layered Structure for Efficient Light Absorption and Ultra-thin Film Formation in Material that Induces All-Optical Magnetization Switching

Abstract

All-Optical magnetization Switching (AOS) is one of promising candidate for fast magnetization manipulation. AOS is occurred by a single ultrashort laser pulse irradiation without any external magnetic field. AOS has fundamentally different mechanism from conventional magnetic field driven switching. In this report, we discussed new layered structure for efficient light absorption and ultra-thin film formation in material that induces All-Optical magnetization Switching.